- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
GET PRICE |
4,485
In-stock
|
IR / Infineon | MOSFET MOSFT 250V 83A 21mOhm 195nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 93 A | 17.5 mOhms | 180 nC | Enhancement | |||||
|
1,152
In-stock
|
IR / Infineon | MOSFET MOSFT 250V 19A 46mOhm 73nC | 30 V | Through Hole | TO-220-3 | - 40 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 19 A | 46 mOhms | 73 nC | Enhancement | ||||||
|
3,178
In-stock
|
IR / Infineon | MOSFET 250V 1 N-CH HEXFET 5MM X 6MM PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 100 mOhms | 37 nC | Enhancement | ||||||
|
2,326
In-stock
|
IR / Infineon | MOSFET Automotive Logic Le mOhm, 13 nC Qg, DPAK | SMD/SMT | TO-252-3 | Tube | Si | N-Channel | 250 V | 9.3 A | 275 mOhms | 13 nC | |||||||||||
|
5,290
In-stock
|
IR / Infineon | MOSFET MOSFT 250V 44A 46mOhm 72nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 46 mOhms | 72 nC | Enhancement | ||||||
|
1,050
In-stock
|
IR / Infineon | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 42 mOhms | 5 V | 72 nC | Enhancement | |||||
|
1,735
In-stock
|
IR / Infineon | MOSFET Automotive Logic Le mOhm, 13 nC Qg, DPAK | SMD/SMT | TO-252-3 | Reel | Si | N-Channel | 250 V | 9.3 A | 275 mOhms | 13 nC | |||||||||||
|
3,890
In-stock
|
IR / Infineon | MOSFET 250V N-CH HEXFET 38mOhms 110nC | 30 V | SMD/SMT | DirectFET-L8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 35 A | 32 mOhms | 110 nC | Enhancement | Directfet | |||||
|
49
In-stock
|
IR / Infineon | MOSFET MOSFT 250V 45A 48mOhm 72nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 48 mOhms | 72 nC | Enhancement | ||||||
|
VIEW | IR / Infineon | MOSFET Automotive Power MOSFET; 250V 345mOhm | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 250 V | 9.3 A | 275 mOhms |