- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
14 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,326
In-stock
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IR / Infineon | MOSFET Automotive Logic Le mOhm, 13 nC Qg, DPAK | SMD/SMT | TO-252-3 | Tube | Si | N-Channel | 250 V | 9.3 A | 275 mOhms | 13 nC | |||||||||||
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92
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | ||||
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45
In-stock
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IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | 5 V | 142 nC | Enhancement | PolarHT | ||||
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15
In-stock
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IXYS | MOSFET 50 Amps 250V 50 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 60 mOhms | 5 V | 78 nC | Enhancement | |||||
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50
In-stock
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IXYS | MOSFET 76 Amps 250V 39 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 76 A | 42 mOhms | 5 V | 92 nC | Enhancement | Trench | ||||
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1,050
In-stock
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IR / Infineon | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 42 mOhms | 5 V | 72 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 62 Amps 250V 50 Rds | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 250 V | 62 A | 50 Ohms | ||||||||||||
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VIEW | IXYS | MOSFET 42 Amps 250V 0.084 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 42 A | 84 mOhms | Enhancement | |||||||
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VIEW | IXYS | MOSFET SMPD MOSFETs Power Device | SMD/SMT | SMPD-24 | Tube | Si | N-Channel | 250 V | 130 A | 13 mOhms | ||||||||||||
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VIEW | IXYS | MOSFET 64 Amps 250V 0.049 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 49 mOhms | 5 V | 105 nC | Enhancement | PolarHT | ||||
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VIEW | IXYS | MOSFET 44 Amps 250V 72 Rds | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 250 V | 44 A | 72 Ohms | ||||||||||||
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VIEW | IXYS | MOSFET 87 Amps 250V 0.027 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 87 A | 27 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 60 Amps 250V 0.047 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 47 mOhms | Enhancement | HyperFET | ||||||
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VIEW | IXYS | MOSFET 25 Amps 250V 0.075 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25 A | 75 mOhms | Enhancement |