- Manufacture :
- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
20 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GET PRICE |
472
In-stock
|
IXYS | MOSFET 155A 250V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 155 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS | ||
|
|
GET PRICE |
5,040
In-stock
|
Fairchild Semiconductor | MOSFET N-Channel UniFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 4.4 A | 1.1 Ohms | 5 V | 6 nC | ||||
|
|
GET PRICE |
798
In-stock
|
Fairchild Semiconductor | MOSFET TO220F, 250V, NCH MOSFET | 30 V | Through Hole | TO-220FP-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 58 mOhms | 5 V | 47 nC | Enhancement | UniFET | ||
|
|
GET PRICE |
1,020
In-stock
|
IXYS | MOSFET 180A 250V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 180 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS | ||
|
|
GET PRICE |
8,000
In-stock
|
IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | 5 V | 142 nC | Enhancement | PolarHT | ||
|
|
GET PRICE |
26
In-stock
|
IXYS | MOSFET 180A 250V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 180 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS | ||
|
|
GET PRICE |
50
In-stock
|
IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | ||
|
|
GET PRICE |
92
In-stock
|
IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | ||
|
|
GET PRICE |
45
In-stock
|
IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | 5 V | 142 nC | Enhancement | PolarHT | ||
|
|
GET PRICE |
25
In-stock
|
IXYS | MOSFET 120 Amps 250 V 0.24 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | ||
|
|
GET PRICE |
10
In-stock
|
IXYS | MOSFET 120 Amps 250V 0.024 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | 5 V | 185 nC | Enhancement | PolarHT | ||
|
|
GET PRICE |
20
In-stock
|
IXYS | MOSFET 50Amps 250V | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 60 mOhms | 5 V | 78 nC | Enhancement | |||
|
|
GET PRICE |
15
In-stock
|
IXYS | MOSFET 50 Amps 250V 50 Rds | 30 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 60 mOhms | 5 V | 78 nC | Enhancement | |||
|
|
GET PRICE |
50
In-stock
|
IXYS | MOSFET 76 Amps 250V 39 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 76 A | 42 mOhms | 5 V | 92 nC | Enhancement | Trench | ||
|
|
GET PRICE |
10
In-stock
|
IXYS | MOSFET Trench HiperFETs Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 23 mOhms | 5 V | 180 nC | Enhancement | HiPerFET | ||
|
|
GET PRICE |
1,050
In-stock
|
IR / Infineon | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 42 mOhms | 5 V | 72 nC | Enhancement | |||
|
|
VIEW | IXYS | MOSFET 64 Amps 250V 0.049 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 49 mOhms | 5 V | 105 nC | Enhancement | PolarHT | |||
|
|
VIEW | IXYS | MOSFET 140A 250V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 140 A | 17 mOhms | 5 V | 255 nC | Enhancement | GigaMOS | |||
|
|
VIEW | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | |||
|
|
VIEW | IXYS | MOSFET TRENCH HIPERFET PWR MOSFET 250V 140A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 140 A | 17 mOhms | 5 V | 255 nC | Enhancement | GigaMOS |
