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Package / Case :
Maximum Operating Temperature :
Rds On - Drain-Source Resistance :
3 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPP200N25N3 G
1+
$6.600
10+
$5.610
100+
$4.860
250+
$4.610
RFQ
20,530
In-stock
Infineon Technologies MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 250 V 64 A 17.5 mOhms 2 V 86 nC Enhancement OptiMOS
IPP200N25N3G XKSA1
1+
$6.600
10+
$5.610
100+
$4.860
250+
$4.610
RFQ
41,000
In-stock
Infineon Technologies MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 20 V Through Hole TO-220-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 250 V 64 A 17.5 mOhms 2 V 86 nC Enhancement OptiMOS
IXTQ64N25P
1+
$4.980
10+
$4.230
100+
$3.670
250+
$3.480
RFQ
18
In-stock
IXYS MOSFET 64 Amps 250V 0.049 Rds 20 V Through Hole TO-3P-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 250 V 64 A 49 mOhms     Enhancement  
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