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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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347
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel Adv Q-FET C-Series | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 62 A | 35 mOhms | Enhancement | QFET | |||||
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GET PRICE |
8,000
In-stock
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IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | Enhancement | |||||
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8,000
In-stock
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IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | 5 V | 142 nC | Enhancement | PolarHT | |||
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VIEW | IXYS | MOSFET 62 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 62 A | 35 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 62 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 62 A | 35 mOhms | Enhancement | HyperFET |
