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23 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
4,485
In-stock
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IR / Infineon | MOSFET MOSFT 250V 83A 21mOhm 195nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 93 A | 17.5 mOhms | 180 nC | Enhancement | ||||
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5,290
In-stock
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IR / Infineon | MOSFET MOSFT 250V 44A 46mOhm 72nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 46 mOhms | 72 nC | Enhancement | |||||
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24,300
In-stock
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Infineon Technologies | MOSFET MOSFT 250V 57A 33mOhm 99nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 57 A | 33 mOhms | 99 nC | Enhancement | |||||
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26
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IXYS | MOSFET 180A 250V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 180 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS | |||
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90
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IXYS | MOSFET 110 Amps 250V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 110 A | 24 mOhms | Enhancement | ||||||
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60
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IXYS | MOSFET 76 Amps 250V 39 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 76 A | 39 mOhms | Enhancement | ||||||
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25
In-stock
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IXYS | MOSFET 120 Amps 250 V 0.24 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | |||
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10
In-stock
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IXYS | MOSFET Trench HiperFETs Power MOSFETs | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 23 mOhms | 5 V | 180 nC | Enhancement | HiPerFET | |||
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25
In-stock
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IXYS | MOSFET 110 Amps 0V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 250 V | 110 A | 24 mOhms | ||||||||||
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VIEW | IXYS | MOSFET 62 Amps 250V 50 Rds | Through Hole | TO-247-3 | Tube | Si | N-Channel | 250 V | 62 A | 50 Ohms | |||||||||||
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VIEW | IXYS | MOSFET 96 Amps 250V 36 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 96 A | 29 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 140A 250V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 140 A | 17 mOhms | 5 V | 255 nC | Enhancement | GigaMOS | |||
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VIEW | IXYS | MOSFET 102 Amps 250V 29 Rds | Through Hole | TO-247-3 | Tube | Si | N-Channel | 250 V | 102 A | 29 Ohms | |||||||||||
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VIEW | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | |||
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VIEW | IXYS | MOSFET 87 Amps 250V 0.027 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 87 A | 27 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 30 Amps 250V 0.075 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 30 A | 75 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 60 Amps 250V 0.046 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 46 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 120 Amps 250V 0.022 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 22 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 25 Amps 250V 0.075 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25 A | 75 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 62 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 62 A | 35 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 41 Amps 250V 0.072 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 41 A | 72 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 60 Amps 250V 0.047 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 47 mOhms | Enhancement | HyperFET |
