- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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GET PRICE |
8,000
In-stock
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IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | Enhancement | |||||
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50
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | |||
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20
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IXYS | MOSFET 50Amps 250V | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 50 A | 60 mOhms | 5 V | 78 nC | Enhancement | ||||
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18
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IXYS | MOSFET 64 Amps 250V 0.049 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 49 mOhms | Enhancement | ||||||
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29
In-stock
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IXYS | MOSFET 42 Amps 250V 0.084 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 42 A | 84 mOhms | 5.5 V | 70 nC | Enhancement | PolarHT | |||
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VIEW | IXYS | MOSFET 62 Amps 250V 50 Rds | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 250 V | 62 A | 50 Ohms | ||||||||||
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VIEW | IXYS | MOSFET 96 Amps 250V 36 Rds | 30 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 96 A | 29 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 102 Amps 250V 29 Rds | Through Hole | TO-3P-3 | Tube | 1 Channel | Si | N-Channel | 250 V | 102 A | 29 Ohms |
