- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,100
In-stock
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Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | ||||
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2,630
In-stock
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STMicroelectronics | MOSFET N-channel 250 V 17A STripFET II | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 17 A | 165 mOhms | 3 V | 29.5 nC | Enhancement | ||||
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3,024
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 5A DPAK-2 | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 5 A | 430 mOhms | 3 V | 4.7 nC | Enhancement | |||||
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891
In-stock
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Siliconix / Vishay | MOSFET N-Channel 250V AEC-Q101 Qualified | +/- 30 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 250 V | 7 A | 0.29 Ohms | 2.5 V | 29 nC | Enhancement | TrenchFET | |||
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1,050
In-stock
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IR / Infineon | MOSFET 250V 1 N-CH HEXFET PDP SWITCH | 30 V | SMD/SMT | TO-252-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 42 mOhms | 5 V | 72 nC | Enhancement | ||||
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VIEW | IR / Infineon | MOSFET Automotive Power MOSFET; 250V 345mOhm | SMD/SMT | TO-252-3 | + 175 C | Reel | Si | N-Channel | 250 V | 9.3 A | 275 mOhms |
