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4 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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4,572
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 7.4 A | 420 mOhms | Enhancement | ||||
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5,040
In-stock
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Fairchild Semiconductor | MOSFET N-Channel UniFET | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 4.4 A | 1.1 Ohms | 5 V | 6 nC | |||
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746
In-stock
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Infineon Technologies | MOSFET Automotive Logic Le mOhm, 13 nC Qg, IPAK | Through Hole | TO-251-3 | Tube | Si | N-Channel | 250 V | 9.3 A | 275 mOhms | 13 nC | ||||||||
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628
In-stock
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onsemi | MOSFET NCH 10A 250V TP(IPAK | 30 V | Through Hole | TO-251-3 | - 55 C | + 150 C | Bulk | 1 Channel | Si | N-Channel | 250 V | 10 A | 320 mOhms | 2.5 V | 16 nC | Enhancement |
