- Manufacture :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Channel Mode :
- Applied Filters :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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5,481
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 100 mA | 7.8 Ohms | - 2.1 V | 3.5 nC | Depletion | |||
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2,226
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 30mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 100 mA | 7.8 Ohms | - 2.1 V | 3.5 nC | Depletion | |||
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6,356
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 30mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 100 mA | 7.8 Ohms | - 2.1 V | 3.5 nC | Depletion | |||
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4,649
In-stock
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onsemi | MOSFET NCH 350MA 250V 2.5V | 10 V | SMD/SMT | SOT-23-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 350 mA | 5 Ohms | 400 mV | 2.1 nC | Enhancement | ||||
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13,385
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 30mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 100 mA | 7.8 Ohms | - 2.1 V | 3.5 nC | Depletion | |||
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2,016
In-stock
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onsemi | MOSFET NCH 350MA 250V 2.5V DRIVE | 10 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 350 mA | 5 Ohms | 400 mV | 2.1 nC | Enhancement |
