- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
17 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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20,530
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
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GET PRICE |
7,650
In-stock
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Infineon Technologies | MOSFET MOSFT 250V 60A 33mOhm 99nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 60 A | 33 mOhms | 99 nC | Enhancement | ||||
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GET PRICE |
4,485
In-stock
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IR / Infineon | MOSFET MOSFT 250V 83A 21mOhm 195nC Qg | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 93 A | 17.5 mOhms | 180 nC | Enhancement | ||||
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1,713
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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41,000
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 64A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 64 A | 17.5 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
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5,290
In-stock
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IR / Infineon | MOSFET MOSFT 250V 44A 46mOhm 72nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 44 A | 46 mOhms | 72 nC | Enhancement | |||||
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224
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 61A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 61 A | 19 mOhms | 2 V | 86 nC | Enhancement | ||||
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417
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 61A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 61 A | 19 mOhms | 2 V | 86 nC | Enhancement | OptiMOS | |||
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24,300
In-stock
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Infineon Technologies | MOSFET MOSFT 250V 57A 33mOhm 99nC Qg | 30 V | Through Hole | TO-247-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 57 A | 33 mOhms | 99 nC | Enhancement | |||||
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GET PRICE |
31,000
In-stock
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Infineon Technologies | MOSFET MOSFT 250V 46A 46mOhm 72nC Qg | 30 V | Through Hole | TO-220-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 46 A | 46 mOhms | 72 nC | Enhancement | ||||
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503
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 17A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 17 A | 85 mOhms | 2 V | 19 nC | Enhancement | ||||
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907
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 17A TO220-3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 17 A | 85 mOhms | 2 V | 19 nC | Enhancement | ||||
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415
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 25A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 25 A | 51 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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25
In-stock
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IXYS | MOSFET 120 Amps 250 V 0.24 Ohm Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | 5 V | 185 nC | Enhancement | PolarHT, HiPerFET | |||
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10
In-stock
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IXYS | MOSFET 120 Amps 250V 0.024 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | 5 V | 185 nC | Enhancement | PolarHT | |||
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9
In-stock
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IXYS | MOSFET 120 Amps 250V 0.024 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 120 A | 24 mOhms | Enhancement | HyperFET | |||||
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49
In-stock
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IR / Infineon | MOSFET MOSFT 250V 45A 48mOhm 72nC | 30 V | Through Hole | TO-262-3 | - 40 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 250 V | 45 A | 48 mOhms | 72 nC | Enhancement |
