- Mounting Style :
- Id - Continuous Drain Current :
- Rds On - Drain-Source Resistance :
-
- 100 mOhms (1)
- 12.9 mOhms (3)
- 122 mOhms (1)
- 146 mOhms (3)
- 165 mOhms (3)
- 168 mOhms (2)
- 17 mOhms (3)
- 2.8 Ohms (1)
- 20 mOhms (1)
- 22 mOhms (2)
- 23 mOhms (1)
- 235 mOhms (2)
- 24 mOhms (1)
- 27 mOhms (8)
- 33 mOhms (3)
- 35 mOhms (5)
- 371 mOhms (2)
- 42 mOhms (1)
- 44 mOhms (1)
- 46 mOhms (1)
- 47 mOhms (3)
- 49 mOhms (2)
- 5 Ohms (1)
- 50 mOhms (2)
- 69 mOhms (2)
- 7.8 Ohms (4)
- 72 mOhms (1)
- 75 mOhms (2)
- 84 mOhms (3)
- 95 mOhms (1)
- 97 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Channel Mode :
67 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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402
In-stock
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IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | PLUS-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
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3,173
In-stock
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Fairchild Semiconductor | MOSFET 250V 3.0A 117 OHM NCH ULTRAFE | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 3 A | 97 mOhms | Enhancement | UltraFET | |||||
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3,281
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 25A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 50 mOhms | 2 V | 29 nC | Enhancement | OptiMOS | |||
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1,363
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Ch UltraFET PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 2.8 A | 122 mOhms | Enhancement | UltraFET | |||||
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4,194
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 5A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 5 A | 371 mOhms | 2 V | 5.5 nC | Enhancement | OptiMOS | |||
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5,310
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10.9 A | 146 mOhms | 2 V | 11.4 nC | Enhancement | OptiMOS | |||
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8,206
In-stock
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Nexperia | MOSFET TAPE-7 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 375 mA | 2.8 Ohms | Enhancement | ||||||
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4,887
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 10.9A TDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 10.9 A | 146 mOhms | |||||||
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472
In-stock
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IXYS | MOSFET 155A 250V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 155 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS | |||
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3,178
In-stock
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IR / Infineon | MOSFET 250V 1 N-CH HEXFET 5MM X 6MM PQFN | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 25 A | 100 mOhms | 37 nC | Enhancement | |||||
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100
In-stock
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IXYS | MOSFET | 20 V | SMD/SMT | DE-475-6 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 250 V | 100 A | 17 mOhms | 2.5 V | 255 nC | Enhancement | GigaMOS, HiperFET | ||||
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1,481
In-stock
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STMicroelectronics | MOSFET NCh 30V 0.0032Ohm 20A MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 17 A | 165 mOhms | Enhancement | ||||||
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1,066
In-stock
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STMicroelectronics | MOSFET N-Channel 250V Pwr Mosfet | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 13 A | 235 mOhms | Enhancement | ||||||
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1,020
In-stock
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IXYS | MOSFET 180A 250V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 180 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS | |||
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30
In-stock
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IXYS | MOSFET 90 Amps 250V | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | |||||||
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3,652
In-stock
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Nexperia | MOSFET TAPE13 MOSFET | 20 V | SMD/SMT | SOT-223-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 375 mA | 5 Ohms | Enhancement | ||||||
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5,481
In-stock
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Infineon Technologies | MOSFET SMALL SIGNAL+P-CH | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 100 mA | 7.8 Ohms | - 2.1 V | 3.5 nC | Depletion | ||||
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1,194
In-stock
|
STMicroelectronics | MOSFET N-Ch 250V 0.165 Ohm 17A 90W STripFET II | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 17 A | 165 mOhms | Enhancement | ||||||
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18
In-stock
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IXYS | MOSFET 90 Amps 250V | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 90 A | 33 mOhms | 4.5 V | 640 nC | Enhancement | LinearL2 | |||
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2,226
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 30mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 100 mA | 7.8 Ohms | - 2.1 V | 3.5 nC | Depletion | ||||
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GET PRICE |
8,000
In-stock
|
IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | Enhancement | |||||
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6,356
In-stock
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Infineon Technologies | MOSFET N-Ch 250V 30mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 100 mA | 7.8 Ohms | - 2.1 V | 3.5 nC | Depletion | ||||
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8,000
In-stock
|
IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | 5 V | 142 nC | Enhancement | PolarHT | |||
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26
In-stock
|
IXYS | MOSFET 180A 250V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 180 A | 12.9 mOhms | 5 V | 345 nC | Enhancement | GigaMOS | |||
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50
In-stock
|
IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | Through Hole | TO-3P-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | |||
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272
In-stock
|
STMicroelectronics | MOSFET N-Channel 650V Pwr Mosfet | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 13 A | 235 mOhms | Enhancement | ||||||
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90
In-stock
|
IXYS | MOSFET 110 Amps 250V | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 110 A | 24 mOhms | Enhancement | ||||||
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92
In-stock
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IXYS | MOSFET 100 Amps 250V 0.027 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 100 A | 27 mOhms | 5 V | 185 nC | Enhancement | PolarHT | |||
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|
45
In-stock
|
IXYS | MOSFET 82 Amps 250V 0.035 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 82 A | 35 mOhms | 5 V | 142 nC | Enhancement | PolarHT | |||
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13,385
In-stock
|
Infineon Technologies | MOSFET N-Ch 250V 30mA SOT-23-3 | 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 250 V | 100 mA | 7.8 Ohms | - 2.1 V | 3.5 nC | Depletion |
