- Vgs - Gate-Source Voltage :
- Mounting Style :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
-
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- Rds On - Drain-Source Resistance :
-
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- 9 mOhms (4)
- 9.1 mOhms (1)
- 9.2 mOhms (1)
- 90 mOhms (1)
- 970 mOhms (1)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 100 nC (4)
- 103 nC (2)
- 107 nC (3)
- 108 nC (4)
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- 66 nC (2)
- 66.7 nC (2)
- 68 nC (5)
- 75 nC (5)
- 79 nC (1)
- 860 nC (1)
- 90 nC (1)
- 91 nC (2)
- 93 nC (2)
- 93.3 nC (2)
- Applied Filters :
195 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
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12,000
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 4 V | 100 nC | |||||
|
|
3,130
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 343A 1.7mOhm 108nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 343 A | 1.4 mOhms | 2.5 V | 108 nC | |||||
|
|
991
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel Power Trench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 277 A | 2.2 mOhms | Enhancement | PowerTrench | |||||
|
|
GET PRICE |
13,472
In-stock
|
Infineon Technologies | MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 414 A | 1.6 mOhms | 1 V | 180 nC | Enhancement | StrongIRFET | ||
|
|
2,375
In-stock
|
IR / Infineon | MOSFET 40V StrongIRFET 240A, .75mOhm,305nC | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 Ohms | 3 V | 305 nC | Enhancement | StrongIRFET | |||
|
|
897
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 522 A | 750 uOhms | 3 V | 305 nC | Enhancement | CoolIRFet | |||
|
|
2,258
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 13mOhms 29nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 11 A | 15 mOhms | 0.8 V to 2 V | 29 nC | Enhancement | ||||
|
|
645
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 1.25mOhms 160nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 400 A | 90 mOhms | 160 nC | ||||||||
|
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1,021
In-stock
|
STMicroelectronics | MOSFET N-Ch 40 Volt 120 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 4.6 mOhms | Enhancement | ||||||
|
|
2,926
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 2 V | 150 nC | Enhancement | ||||
|
|
2,775
In-stock
|
Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | |||
|
|
2,662
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-262-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | ||||||||
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2,615
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 9 mOhms | 62 nC | Enhancement | |||||
|
|
3,031
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 2.2 V to 3.9 V | 300 nC | Enhancement | CoolIRFet | |||
|
|
2,956
In-stock
|
IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.2 mOhms | 2 V | 260 nC | Enhancement | ||||
|
|
1,064
In-stock
|
Infineon Technologies | MOSFET 40V SGL N-CH HEXFET 1.3mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 240 A | 1.3 mOhms | 2.2 V to 3.9 V | 150 nC | Enhancement | CoolIRFet | |||
|
|
3,000
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.9mOhm 193A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.3 mOhms | 2.2 V to 3.9 V | 107 nC | Enhancement | CoolIRFet | |||
|
|
1,992
In-stock
|
IR / Infineon | MOSFET Auto 40V N-Ch FET 1.4mOhm 195A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.8 mOhms | 2 V to 4 V | 150 nC | Enhancement | CoolIRFet | |||
|
|
2,990
In-stock
|
Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 270 A | 2.3 mOhms | 160 nC | Enhancement | ||||||
|
|
2,846
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | |||
|
|
1,550
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | |||
|
|
1,328
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 5mOhms 33nC | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 18 A | 5.9 mOhms | 33 nC | Enhancement | |||||
|
|
GET PRICE |
68,250
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | |||||||
|
|
594
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.7 mOhms | Enhancement | PowerTrench | |||||
|
|
439
In-stock
|
Fairchild Semiconductor | MOSFET 40V 100A 2.1mOhm N-Chan Power Trench | 20 V | Through Hole | TO-3PN-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 30 A | 2.1 mOhms | Enhancement | PowerTrench | |||||
|
|
2,326
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.6 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | |||
|
|
580
In-stock
|
Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 1.7mOhms 108nC | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 343 A | 2 mOhms | 108 nC | ||||||||
|
|
372
In-stock
|
IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 523 A | 690 mOhms | 2.2 V | 305 nC | Enhancement | ||||
|
|
1,134
In-stock
|
STMicroelectronics | MOSFET N-Ch 42V 6A OmniFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 40 V | 6 A | 60 mOhms | ||||||||
|
|
427
In-stock
|
Infineon Technologies | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 2.2 V to 3.9 V | 300 nC | Enhancement | CoolIRFet |
