- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Id - Continuous Drain Current :
- Qg - Gate Charge :
- Tradename :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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754
In-stock
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Infineon Technologies | MOSFET P-Ch -40V -180A D2PAK-6 OptiMOS-P2 | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | - 180 A | 2.8 mOhms | 190 nC | OptiMOS | |||||
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250
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | SON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.8 mOhms | 1.5 V | 59 nC | Enhancement | NexFET | |||
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VIEW | IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 2.8 mOhms | 4 V | 112 nC | Enhancement | TrenchT2 | |||
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39
In-stock
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IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 2.8 mOhms | 4 V | 112 nC | Enhancement | TrenchT2 | |||
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2,497
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET 8-VSONP -55... | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.8 mOhms | 1.5 V | 59 nC | Enhancement |
