- Mounting Style :
- Package / Case :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Tradename :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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18,212
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 3.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | |||
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3,324
In-stock
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IR / Infineon | MOSFET 40V 85A 3.3mOhm 65nC StrongIRFET | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | Si | N-Channel | 40 V | 117 A | 3.3 mOhms | 3.9 V | 98 nC | Enhancement | StrongIRFET | |||||
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2,491
In-stock
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Infineon Technologies | MOSFET Automotive HEXFET COOLiRFET | 20 V | SMD/SMT | PQFN-8 | - 55C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.3 mOhms | 3.9 V | 65 nC | Enhancement | ||||
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3,740
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 40A TSDSON-8 OptiMOS 3 | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 3.3 mOhms | 1.2 V | 64 nC | Enhancement | OptiMOS | |||
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1,200
In-stock
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Infineon Technologies | MOSFET 40V 118A 3.3 mOhm HEXFET 62nC 99W | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 93 nC | StrongIRFET | ||||||||
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574
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A D2PAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.3 mOhms | 51 nC | OptiMOS | |||||
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263
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.3 mOhms | OptiMOS | |||||||||
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25
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 2.6mOhm 123A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 2.2 V to 3.9 V | 62 nC | Enhancement | CoolIRFet | |||
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1,934
In-stock
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Texas instruments | MOSFET 40-V N-Ch NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | 1.8 V | 52 nC | NexFET | ||||
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502
In-stock
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Texas instruments | MOSFET 40-V, N-Channel NexFET? Power MOSFET 8-VSON-CLI... | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | 1.5 V | 52 nC | Enhancement | NexFET | |||
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276
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TO220-3 OptiMOS-T | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | Enhancement | OptiMOS | |||||
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659
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A D2PAK-2 OptiMOS-T | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | Enhancement | OptiMOS | |||||
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1,999
In-stock
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Toshiba | MOSFET UMOSVIII 40V 4.3m max(VGS=10V) DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 65 A | 3.3 mOhms | 2.5 V | 39 nC | Enhancement | ||||
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1,784
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 2.6mOhm 123A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 2.2 V to 3.9 V | 62 nC | Enhancement | CoolIRFet | |||
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475
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TO220-3 OptiMOS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.3 mOhms | Enhancement | OptiMOS |
