- Mounting Style :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Qg - Gate Charge :
18 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,251
In-stock
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Fairchild Semiconductor | MOSFET PT8 40V/20V Nch PowerTrench MOSFET | 20 V | SMD/SMT | Power-33-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 1.2 mOhms | 1.5 V | 173 nC | Enhancement | PowerTrench Power Clip | ||||
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1,598
In-stock
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Fairchild Semiconductor | MOSFET N-Channel Power Trench MOSFET | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 240 A | 1.2 mOhms | 3.2 V | 90 nC | Enhancement | PowerTrench | ||||
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927
In-stock
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Fairchild Semiconductor | MOSFET TO-leadless, PT8, 40V | 20 V | SMD/SMT | H-PSOF-8 | - 55 C | + 175 C | Reel | Si | N-Channel | 40 V | 240 A | 1.2 mOhms | 2 V | 90 nC | Enhancement | PowerTrench | |||||
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GET PRICE |
6,539
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.2 mOhms | 1.2 V | 77 nC | Enhancement | ||||
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1,964
In-stock
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Infineon Technologies | MOSFET 40V Single N-Channel HEXFET Power MOSFET | 20 V | SMD/SMT | DirectFET-ME | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 217 A | 1.2 mOhms | 3 V | 123 nC | Enhancement | StrongIRFET | ||||
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3,031
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 2.2 V to 3.9 V | 300 nC | Enhancement | CoolIRFet | ||||
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5,886
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.2 mOhms | 1.2 V | 196 nC | Enhancement | OptiMOS | ||||
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2,956
In-stock
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IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 2.3mOhms | 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 320 A | 1.2 mOhms | 2 V | 260 nC | Enhancement | |||||
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1,910
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 2 V | 250 nC | Enhancement | OptiMOS | ||||
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427
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 2.2 V to 3.9 V | 300 nC | Enhancement | CoolIRFet | ||||
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225
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 1.2 V | 346 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 1.2 mOhms | 1.2 V | 77 nC | Enhancement | OptiMOS | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 180A CanPAK3 MX OptiMOS 3 | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 1.2 mOhms | 1.2 V | 196 nC | Enhancement | OptiMOS | ||||
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800
In-stock
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Infineon Technologies | MOSFET 40V StrongIRFET 195A, 1.2mOhm,300nC | 20 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 426 A | 1.2 mOhms | 3.9 V | 300 nC | StrongIRFET | |||||||
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270
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 1.2 mOhms 195A | 20 V | Through Hole | TO-262-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 2.2 V to 3.9 V | 300 nC | Enhancement | CoolIRFet | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 1.2 V | 346 nC | Enhancement | OptiMOS | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 120A D2PAK-2 OptiMOS 3 | 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.2 mOhms | 2 V | 250 nC | Enhancement | OptiMOS | ||||
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79
In-stock
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IR / Infineon | MOSFET 40V StrongIRFET 195A, 1.2mOhm,300nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 3.9 V | 300 nC | StrongIRFET |