- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Tradename :
10 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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4,266
In-stock
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Fairchild Semiconductor | MOSFET 40/20V, N Chan PowerTrench | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 18 A | 4.3 mOhms | Enhancement | PowerTrench | ||||||
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3,975
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 86 A | 4.3 mOhms | 2 V | 37 nC | Enhancement | |||||
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165
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 86 A | 4.3 mOhms | 2 V | 37 nC | Enhancement | OptiMOS | ||||
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18,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 2 V | 43 nC | Enhancement | OptiMOS | ||||
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9,310
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 4.3 mOhms | 1.8 V | 42 nC | NexFET | |||||
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5,230
In-stock
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Texas instruments | MOSFET 40-V, N-Chanel NxFT Pwr MOSFETs | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.3 mOhms | 1.8 V | 52 nC | NexFET | |||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS-T2 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 2 V | 43 nC | Enhancement | |||||
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2,500
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 90A DPAK-2 OptiMOS-T | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 4.3 mOhms | OptiMOS | |||||||||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | 16 V | SMD/SMT | DirectFET-M4 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 112 A | 4.3 mOhms | 52 nC | Enhancement | |||||||
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890
In-stock
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STMicroelectronics | MOSFET N-Ch 40V 3.5m Ohm 80A STripFET VI | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.3 mOhms | 4 V | 65 nC | Enhancement |