- Mounting Style :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,474
In-stock
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Fairchild Semiconductor | MOSFET N-channel Power Trench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 90 A | 3.2 mOhms | 3.2 V | 42 nC | Enhancement | PowerTrench | |||
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822
In-stock
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Infineon Technologies | MOSFET Auto 40V N-Ch FET 4.3mOhms 100A | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.25 mOhms | 3.9 V | 42 nC | Enhancement | CoolIRFet | |||
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1,010
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 4.3mOhms 100A | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.25 mOhms | 42 nC | CoolIRFet | ||||||||
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384
In-stock
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IR / Infineon | MOSFET Auto 40V N-Ch FET 3.2mOhm 100A | 20 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 4.25 mOhms | 2.2 V to 3.9 V | 42 nC | Enhancement | CoolIRFet | |||
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9,310
In-stock
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Texas instruments | MOSFET 40V N-Channel NexFET Power MOSFET | 20 V | SMD/SMT | VSONP-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 4.3 mOhms | 1.8 V | 42 nC | NexFET | ||||
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VIEW | Infineon Technologies | MOSFET 40V N-CH HEXFET 3.4mOhms 42nC | 20 V | SMD/SMT | DirectFET-MT | Reel | 1 Channel | Si | N-Channel | 40 V | 23 A | 4.1 mOhms | 42 nC | Directfet |
