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7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,443
In-stock
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IR / Infineon | MOSFET MOSFT 40V 77A 9mOhm 30nC Qg | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 77 A | 9 mOhms | 4 V | 45 nC | |||||||
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1,949
In-stock
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onsemi | MOSFET NFET 40V SPCL TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 70 A | 13.2 mOhms | 3.5 V | 45 nC | |||||
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714
In-stock
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Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 1.2 V | 45 nC | Enhancement | ||||
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1,490
In-stock
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onsemi | MOSFET NFET 40V SPCL TR | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 69 A | 5.7 mOhms | 2 V | 45 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET DIFFERENTIATED MOSFETS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2.2 mOhms | 1.2 V | 45 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 2.1 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET MV POWER MOS | 20 V | SMD/SMT | TSDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 40 V | 40 A | 2.2 mOhms | 1.2 V | 45 nC | Enhancement | OptiMOS |
