- Mounting Style :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
-
- 0.0008 Ohms (1)
- 0.0012 Ohms (1)
- 0.0013 Ohms (1)
- 0.0014 Ohms (2)
- 0.0015 Ohms (2)
- 0.00225 Ohms (1)
- 0.0025 Ohms (1)
- 0.0028 Ohms (1)
- 0.003 Ohms (6)
- 0.0035 Ohms (1)
- 0.0036 Ohms (2)
- 0.0037 Ohms (1)
- 0.0043 Ohms (1)
- 0.0046 Ohms (2)
- 0.005 Ohms (1)
- 0.0063 Ohms (1)
- 0.0065 Ohms (1)
- 0.0075 Ohms (1)
- 0.008 Ohms (1)
- 0.0138 Ohms (1)
- 0.026 Ohms (3)
- 0.52 mOhms (2)
- 0.79 mOhms (2)
- 1.21 mOhms (1)
- 1.4 mOhms (2)
- 1.7 mOhms (1)
- 2.45 mOhms (1)
- 2.6 mOhms (1)
- 2.9 mOhms (1)
- 27 mOhms (1)
- 500 uOhms (1)
- 6.1 mOhms (2)
- 600 uOhms (1)
- 900 uOhms (2)
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
-
- 100 nC (1)
- 105 nC (4)
- 110 nC (1)
- 12.4 nC (1)
- 12.7 nC (1)
- 120 nC (1)
- 13 nC (1)
- 130 nC (3)
- 135 nC (1)
- 145 nC (1)
- 153 nC (3)
- 16 nC (2)
- 161 nC (1)
- 181 nC (2)
- 20 nC (1)
- 22.5 nC (1)
- 220 nC (2)
- 230 nC (1)
- 260 nC (1)
- 267 nC (1)
- 270 nC (1)
- 285 nC (1)
- 291 nC (1)
- 307 nC (1)
- 310 nC (2)
- 34.3 nC (1)
- 35 nC (1)
- 39 nC (1)
- 413 nC (1)
- 51 nC (1)
- 55 nC (1)
- 62 nC (1)
- 65 nC (2)
- 75 nC (1)
- 80 nC (1)
- 80.6 nC (1)
- 85 nC (2)
- Tradename :
50 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
4,900
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | DirectFET-MF | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 40 V | 159 A | 1.4 mOhms | 2.2 V | 161 nC | Enhancement | StrongIRFET | |||||
|
2,995
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V PowerPAK 1212-8W | +/- 20 V | SMD/SMT | PowerPAK-1212-8W | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 16 A | 0.0065 Ohms | 1.5 V | 35 nC | Enhancement | |||||
|
933
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 557 A | 500 uOhms | 1 V | 307 nC | Enhancement | StrongIRFET | |||||
|
100
In-stock
|
Infineon Technologies | MOSFET | +/- 20 V | SMD/SMT | D2PAK-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 478 A | 600 uOhms | 1 V | 267 nC | Enhancement | StrongIRFET | |||||
|
2,109
In-stock
|
Vishay Semiconductors | MOSFET 40V 10A 1.56W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 20.7 A | 0.0075 Ohms | 1.5 V | 62 nC | Enhancement | TrenchFET | ||||
|
3,742
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | ||||
|
2,467
In-stock
|
Vishay Semiconductors | MOSFET 40V 50A 71W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.0046 Ohms | 2.5 V | 85 nC | Enhancement | TrenchFET | ||||
|
1,659
In-stock
|
Vishay Semiconductors | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0013 Ohms | 1.5 V | 260 nC | Enhancement | TrenchFET | ||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 2.6 mOhms | 1.5 V | 80 nC | Enhancement | |||||
|
1,775
In-stock
|
Vishay Semiconductors | MOSFET -40V 75A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 75 A | 0.0028 Ohms | 1.5 V | 100 nC | Enhancement | TrenchFET | ||||
|
770
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0015 Ohms | 2.5 V | 310 nC | Enhancement | TrenchFET | |||||
|
1,906
In-stock
|
Vishay Semiconductors | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.003 Ohms | 2.5 V | 105 nC | Enhancement | TrenchFET | ||||
|
1,351
In-stock
|
Vishay Semiconductors | MOSFET 40V 60A 55W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 0.0036 Ohms | 1.5 V | 65 nC | Enhancement | TrenchFET | ||||
|
2,157
In-stock
|
Vishay Semiconductors | MOSFET 40V 16A 62W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 16 A | 0.008 Ohms | 1.5 V | 39 nC | Enhancement | TrenchFET | ||||
|
885
In-stock
|
Vishay Semiconductors | MOSFET 40V 32A 83W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 32 A | 0.0035 Ohms | 1.5 V | 120 nC | Enhancement | TrenchFET | ||||
|
2,929
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TSOP-6 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 0.026 Ohms | 1.5 V | 12.4 nC | Enhancement | TrenchFET | ||||
|
1,190
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SO-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 29 A | 0.0036 Ohms | 1.5 V | 110 nC | Enhancement | TrenchFET | ||||
|
782
In-stock
|
Vishay Semiconductors | MOSFET 40V 200A, 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0008 Ohms | 1.5 V | 413 nC | Enhancement | TrenchFET | ||||
|
514
In-stock
|
Vishay Semiconductors | MOSFET 40V 200A 375 AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 200 A | 0.0012 Ohms | 1.5 V | 291 nC | Enhancement | TrenchFET | ||||
|
GET PRICE |
800
In-stock
|
Vishay Semiconductors | MOSFET 40V 100A 157W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 0.00225 Ohms | 2.5 V | 145 nC | Enhancement | TrenchFET | |||
|
800
In-stock
|
Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 1.21 mOhms | 1.5 V | 230 nC | Enhancement | |||||
|
2,969
In-stock
|
Siliconix / Vishay | MOSFET N-Channel 40V AEC-Q101 Qualified | +/- 20 V | SMD/SMT | SOT-23-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 8 A | 0.026 Ohms | 1.5 V | 13 nC | Enhancement | TrenchFET | ||||
|
594
In-stock
|
Vishay Semiconductors | MOSFET 40V 58A 48W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 0.005 Ohms | 1.5 V | 55 nC | Enhancement | TrenchFET | ||||
|
1,335
In-stock
|
Vishay Semiconductors | MOSFET 40V 12A 33W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 12 A | 0.0138 Ohms | 1.5 V | 22.5 nC | Enhancement | TrenchFET | ||||
|
360
In-stock
|
Vishay Semiconductors | MOSFET 40V 120A 375W AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 120 A | 0.0014 Ohms | 1.5 V | 285 nC | Enhancement | TrenchFET | ||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 15 A | 27 mOhms | 1.5 V | 20 nC | Enhancement | |||||
|
GET PRICE |
16,730
In-stock
|
Siliconix / Vishay | MOSFET N-Chnl 40-V (D-S) AEC-Q101 Qualified | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 50 A | 0.003 Ohms | 1.5 V | 130 nC | Enhancement | TrenchFET | |||
|
1,900
In-stock
|
Siliconix / Vishay | MOSFET N Ch 40Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-8x8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 160 A | 900 uOhms | 1.5 V | 220 nC | Enhancement | |||||
|
2,500
In-stock
|
onsemi | MOSFET T6 40V SL DPAK | +/- 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 101 A | 2.9 mOhms | 2 V | 34.3 nC | Enhancement | |||||
|
3,000
In-stock
|
Siliconix / Vishay | MOSFET N-Ch 40V Vds AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 60 A | 2.45 mOhms | 2.5 V | 105 nC | Enhancement |