- Mounting Style :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
28 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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15,003
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 3.6A 56mOhm 2.6nC Qg | 16 V | SMD/SMT | SOT-23-3 | Reel | Si | N-Channel | 40 V | 3.6 A | 78 mOhms | 2.6 nC | ||||||||||
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1,382
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET PWR MOSFET 2.4mOhms | 16 V | SMD/SMT | PQFN-8 | Reel | 1 Channel | Si | N-Channel | 40 V | 100 A | 3.2 mOhms | 82 nC | |||||||||
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3,738
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 5.2 mOhms | 2.5 V | 40 nC | Enhancement | |||||
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4,800
In-stock
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Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 7mOhms | 16 V | SMD/SMT | DirectFET-SC | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 6.6 mOhms | 2.5 V | 22 nC | ||||||
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2,085
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 16 V | SMD/SMT | TDSON-8 | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 8 mOhms | OptiMOS | ||||||||
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1,149
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 4.5mOhms 40nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 6.5 mOhms | 1 V to 2.5 V | 40 nC | Enhancement | |||||
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775
In-stock
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Infineon Technologies | MOSFET MOSFT 130A 66.7nC 6.5mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 9 mOhms | 66.7 nC | |||||||||
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994
In-stock
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STMicroelectronics | MOSFET N-Ch 40 Volt 80 Amp | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 80 A | 5 Ohms | Enhancement | |||||||
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466
In-stock
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IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 16 V | SMD/SMT | TO-263-7 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 500 A | 1.1 mOhms | 1 V | 177 nC | Enhancement | |||||
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289
In-stock
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Infineon Technologies | MOSFET MOSFT 40V 200A 3.1mOhm 75nC LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 200 A | 5 mOhms | 75 nC | |||||||||
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402
In-stock
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Infineon Technologies | MOSFET 40V 1 N-CH HEXFET 3.1mOhms 75nC | 16 V | SMD/SMT | TO-263-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 200 A | 5 mOhms | 75 nC | |||||||||
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300
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms | 16 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 5.9 mOhms | 75 nC | Enhancement | |||||||
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322
In-stock
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Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms | 16 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 5.9 mOhms | 75 nC | Enhancement | |||||||
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542
In-stock
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IR / Infineon | MOSFET N-CHANNEL 30 / 40 | 16 V | Through Hole | TO-251-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 3.9 mOhms | 1 V | 56 nC | Enhancement | |||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 OptiMOS-T2 | 16 V | SMD/SMT | TDSON-8 | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 11.6 mOhms | OptiMOS | ||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms | 16 V | SMD/SMT | TO-263-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 5.9 mOhms | 75 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 3mOhms | 16 V | SMD/SMT | DirectFET-M4 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 112 A | 4.3 mOhms | 52 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms | 16 V | SMD/SMT | TO-263-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 5.9 mOhms | 75 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET N-Ch 40V 20A TDSON-8 | 16 V | SMD/SMT | TDSON-8 | - 55 C | + 175 C | Reel | 2 Channel | Si | N-Channel | 40 V | 20 A | 7.2 mOhms | 1.7 V | 39 nC | Enhancement | |||||
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VIEW | Infineon Technologies | MOSFET 40V AUTOGRADE 1 N-CH HEXFET 6.6mOhms | 16 V | SMD/SMT | DirectFET-SC | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 58 A | 10.5 mOhms | 22 nC | Enhancement | |||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 6.5 mOhms | 40 nC | |||||||||
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VIEW | Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms | 16 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 6.5 mOhms | 40 nC | |||||||||
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88
In-stock
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IR / Infineon | MOSFET MOSFT 40V 110A 6.5mOhm 66.7nC LogLv | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 110 A | 9 mOhms | 66.7 nC | |||||||||
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38
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET 6.5mOhms 66.7nC | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 110 A | 9 mOhms | 1 V | 66.7 nC | Enhancement | |||||
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29
In-stock
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IR / Infineon | MOSFET 40V 1 N-CH HEXFET PWR MOSFET 6.5mOhms | 16 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 9 mOhms | 1 V | 100 nC | Enhancement | |||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 6.5 mOhms | 40 nC | |||||||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 4.5mOhms | 16 V | SMD/SMT | TO-252-3 | Reel | 1 Channel | Si | N-Channel | 40 V | 130 A | 6.5 mOhms | 40 nC | |||||||||
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VIEW | IR / Infineon | MOSFET AUTO 40V 1 N-CH HEXFET 3.1mOhms | 16 V | SMD/SMT | TO-263-3 | - 55 C | Reel | 1 Channel | Si | N-Channel | 40 V | 180 A | 5.9 mOhms | 75 nC | Enhancement |