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- Qg - Gate Charge :
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- Applied Filters :
87 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
12,000
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 190A 3.7mOhm 100nC Qg | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 2.7 mOhms | 4 V | 100 nC | ||||||
|
3,130
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 343A 1.7mOhm 108nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 343 A | 1.4 mOhms | 2.5 V | 108 nC | ||||||
|
991
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel Power Trench | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 277 A | 2.2 mOhms | Enhancement | PowerTrench | ||||||
|
GET PRICE |
13,472
In-stock
|
Infineon Technologies | MOSFET 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 414 A | 1.6 mOhms | 1 V | 180 nC | Enhancement | StrongIRFET | |||
|
1,021
In-stock
|
STMicroelectronics | MOSFET N-Ch 40 Volt 120 Amp | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 4.6 mOhms | Enhancement | |||||||
|
2,775
In-stock
|
Infineon Technologies | MOSFET 40V, 120A, 2.7 mOhm 56 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 164 A | 3.5 mOhms | 1 V | 56 nC | Enhancement | StrongIRFET | ||||
|
2,615
In-stock
|
IR / Infineon | MOSFET 40V 1 N-CH HEXFET 2.2mOhms 43nC | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 100 A | 9 mOhms | 62 nC | Enhancement | ||||||
|
2,846
In-stock
|
IR / Infineon | MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 254 A | 2.4 mOhms | 1 V | 91 nC | Enhancement | StrongIRFET | ||||
|
GET PRICE |
68,250
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 162A 4mOhm 160nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 162 A | 4 mOhms | 160 nC | ||||||||
|
594
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-Channel PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 2.7 mOhms | Enhancement | PowerTrench | ||||||
|
2,326
In-stock
|
Infineon Technologies | MOSFET TRENCH_MOSFETS | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 95 A | 3.6 mOhms | 2.2 V | 68 nC | Enhancement | StrongIRFET | ||||
|
427
In-stock
|
Infineon Technologies | MOSFET Auto 40V N-Ch FET 0.97mOhm 195A | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 195 A | 1.2 mOhms | 2.2 V to 3.9 V | 300 nC | Enhancement | CoolIRFet | ||||
|
775
In-stock
|
Infineon Technologies | MOSFET MOSFT 130A 66.7nC 6.5mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 130 A | 9 mOhms | 66.7 nC | |||||||||
|
695
In-stock
|
Fairchild Semiconductor | MOSFET 40V N-CH PowerTrench MOSFET | 20 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 40 V | 12 A | 8.7 mOhms | Enhancement | PowerTrench | ||||||
|
316
In-stock
|
Fairchild Semiconductor | MOSFET 40V/80A/2.8ohm/N-CH POWERTRENCH | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 23 A | 3.1 mOhms | Enhancement | PowerTrench | ||||||
|
395
In-stock
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Fairchild Semiconductor | MOSFET N-CH PowerTrench N-Ch PowerTrench Mos | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 3.5 mOhms | Enhancement | PowerTrench | ||||||
|
GET PRICE |
39,200
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 280A 2.3mOhm 160nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 280 A | 2 mOhms | 160 nC | ||||||||
|
GET PRICE |
49,300
In-stock
|
Infineon Technologies | MOSFET 40V 2.0mOhm 195A HEXFET 230W 150nC | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 250 A | 2 mOhms | 225 nC | StrongIRFET | ||||||||
|
592
In-stock
|
Infineon Technologies | MOSFET N-Ch 40V 80A TO220-3 OptiMOS 3 | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 80 A | 4.1 mOhms | Enhancement | OptiMOS | ||||||
|
33,600
In-stock
|
Infineon Technologies | MOSFET 40V 120A 2.5 mOhm HEXFET 90nC 208W | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 2.5 mOhms | 135 nC | Enhancement | StrongIRFET | |||||||
|
33,900
In-stock
|
Infineon Technologies | MOSFET 40V 1.6mOhm 195A HEXFET 294W 216nC | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 317 A | 1.6 mOhms | 324 nC | StrongIRFET | |||||||||
|
549
In-stock
|
IR / Infineon | MOSFET MOSFT 40V 210A 3.6mOhm 130nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 210 A | 3.6 mOhms | 130 nC | |||||||||
|
1,100
In-stock
|
Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 3.7mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 180 A | 3.7 mOhms | 100 nC | Enhancement | |||||||
|
1,200
In-stock
|
Infineon Technologies | MOSFET 40V 118A 3.3 mOhm HEXFET 62nC 99W | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 123 A | 3.3 mOhms | 93 nC | StrongIRFET | |||||||||
|
291
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 195A 1.7mOhm 160nC Qg | 20 V | Through Hole | TO-220-3 | Tube | Si | N-Channel | 40 V | 340 A | 1.4 mOhms | 160 nC | ||||||||||
|
289
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 200A 3.1mOhm 75nC LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 200 A | 5 mOhms | 75 nC | |||||||||
|
147
In-stock
|
Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 4mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 202 A | 4 mOhms | 131 nC | Enhancement | |||||||
|
183
In-stock
|
IXYS | MOSFET 220 Amps 40V 0.0035 Rds | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 40 V | 220 A | 3.5 mOhms | Enhancement | |||||||
|
20,100
In-stock
|
Infineon Technologies | MOSFET MOSFT 40V 120A 5.5mOhm 68nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 5.5 mOhms | 68 nC | |||||||||
|
445
In-stock
|
Infineon Technologies | MOSFET AUTO 40V 1 N-CH HEXFET 5.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 40 V | 120 A | 5.5 mOhms | 68 nC | Enhancement |