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6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Channel Mode | |
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330
In-stock
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Infineon Technologies | MOSFET MOSFT 24V 353A 1.5mOhm 160nC Qg | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 24 V | 353 A | 1.2 mOhms | 160 nC | ||||
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GET PRICE |
222
In-stock
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Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | Through Hole | TO-220-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 24 V | 353 A | 1.5 mOhms | 160 nC | Enhancement | ||
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71
In-stock
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IR / Infineon | MOSFET MOSFET_(20V,40V)_47 | Through Hole | TO-247-3 | Tube | Si | N-Channel | 24 V | 380 A | 1.25 mOhms | |||||||
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200
In-stock
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Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.3mOhms | 20 V | Through Hole | TO-262-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 24 V | 382 A | 1.3 mOhms | 120 nC | Enhancement | ||
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VIEW | Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 24 V | 340 A | 1.5 mOhms | 160 nC | Enhancement | |||
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GET PRICE |
56
In-stock
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Infineon Technologies | MOSFET MOSFT 24V 340A 1.65mOhm 160nC Qg | 20 V | SMD/SMT | TO-252-3 | Tube | 1 Channel | Si | N-Channel | 24 V | 429 A | 800 uOhms | 180 nC |
