- Rds On - Drain-Source Resistance :
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3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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1,872
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STMicroelectronics | MOSFET N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE... | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | 1 Channel | Si | N-Channel | 68 V | 85 A | 8.2 mOhms | 2 V | 90 nC | Enhancement | |||
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448
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STMicroelectronics | MOSFET N-Ch 68V 0.0063Ohm 96A STripFET VI | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | Si | N-Channel | 68 V | 96 A | 8 mOhms | 99 nC | ||||||
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537
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STMicroelectronics | MOSFET N-Ch 68V 0.0082 Ohm 98 A STripFET II | 20 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 68 V | 98 A | 9.8 mOhms | 4 V | 75 nC | Enhancement |
