- Vgs - Gate-Source Voltage :
- Package / Case :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
6 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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4,630
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1 MOhms | 1 V | 168 nC | Enhancement | ||||
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4,284
In-stock
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Texas instruments | MOSFET Dual N-Channel Nex FET Pwr MOSFET | 10 V | SMD/SMT | DSBGA-12 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 25 V | 5 A | 42 mOhms | 1 V | 3.1 nC | NexFET | ||||
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6,000
In-stock
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Vishay Semiconductors | MOSFET 25V Vds 60A Id 17.2nC Qg Typ. | + 20 V, - 16 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 0.00115 Ohms | 1 V | 55 nC | Enhancement | ||||
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6,000
In-stock
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Vishay Semiconductors | MOSFET 25V Vds 60A Id 17.2nC Qg Typ. | + 20 V, - 16 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 0.00115 Ohms | 1 V | 55 nC | Enhancement | ||||
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5,000
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 100A TDSON-8 OptiMOS | 20 V | SMD/SMT | TDSON-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 1 MOhms | 1 V | 168 nC | Enhancement | OptiMOS | |||
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2,998
In-stock
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Fairchild Semiconductor | MOSFET N-ChannelPowerTrench MOSFET,PwrClip 33Sin | +/- 16 V | SMD/SMT | Power33-8 | - 55 C | + 150 C | Reel | 1 Channel | N-Channel | 25 V | 124 A | 1.4 mOhms | 1 V | 63 nC | Enhancement |
