- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
15 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
12,317
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PwrTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 35 A | 6.5 mOhms | Enhancement | PowerTrench | |||||
|
|
5,606
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 35 A | 8.5 mOhms | Enhancement | PowerTrench | |||||
|
|
2,525
In-stock
|
STMicroelectronics | MOSFET N-channel 25V 25V - 0.0037 | 22 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 80 A | 4.5 mOhms | Enhancement | ||||||
|
|
3,564
In-stock
|
Fairchild Semiconductor | MOSFET 25V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 35 A | 11.6 mOhms | Enhancement | PowerTrench | |||||
|
|
3,395
In-stock
|
Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 35 A | 4.5 mOhms | Enhancement | PowerTrench | |||||
|
|
1,311
In-stock
|
Fairchild Semiconductor | MOSFET LOW VOLTAGE | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 35 A | 3.3 mOhms | Enhancement | PowerTrench | |||||
|
|
1,892
In-stock
|
Fairchild Semiconductor | MOSFET 25V 50A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 27 A | 3.2 mOhms | Enhancement | PowerTrench | |||||
|
|
2,967
In-stock
|
Infineon Technologies | MOSFET MOSFT 25V 57A 8.7mOhm 6.8nC LogLvl | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 57 A | 10.6 mOhms | 1.9 V | 6.8 nC | |||||
|
|
90,000
In-stock
|
onsemi | MOSFET NFET 25V 73A 0.0062R DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 14 A | 6.2 mOhms | Enhancement | ||||||
|
|
2,606
In-stock
|
onsemi | MOSFET NFET 25V 65A 0.0075R DPAK | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 13 A | 7.5 mOhms | Enhancement | ||||||
|
|
43,950
In-stock
|
IR / Infineon | MOSFET 25V 1 N-CH HEXFET 5.9mOhms 8.8nC | 20 V | SMD/SMT | DirectFET-S1 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 37 A | 5.9 mOhms | 1.8 V | 8.8 nC | |||||
|
|
485
In-stock
|
Fairchild Semiconductor | MOSFET 25V 50A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 27 A | 4 mOhms | Enhancement | PowerTrench | |||||
|
|
398
In-stock
|
Fairchild Semiconductor | MOSFET 25V 40A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 20 A | 5.7 mOhms | Enhancement | PowerTrench | |||||
|
|
611
In-stock
|
Fairchild Semiconductor | MOSFET 25V 30A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 16.4 A | 8.6 mOhms | Enhancement | PowerTrench | |||||
|
|
22
In-stock
|
IR / Infineon | MOSFET 25V 1 N-CH HEXFET 8.7mOhms 6.8nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 25 V | 57 A | 12.9 mOhms | 1.35 V to 2.35 V | 6.8 nC | Enhancement |
