- Manufacture :
- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
13 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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3,890
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 75 A | 2.5 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | |||
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5,056
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 180 A | 600 uOhms | 1.2 V | 343 nC | Enhancement | ||||
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4,710
In-stock
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Infineon Technologies | MOSFET N-Ch 25V 163A CanPAK-3 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 163 A | 1.3 mOhms | 1.2 V to 2 V | 62 nC | Enhancement | OptiMOS | |||
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2,768
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.6mOhms 40nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 180 A | 2.1 mOhms | 1.9 V | 40 nC | Directfet | ||||
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1,442
In-stock
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Infineon Technologies | MOSFET 25V SINGLE N-CH 20V VGS HEXFET | 20 V | SMD/SMT | DirectFET-SQ | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 17 A | 6.7 mOhms | 1.9 V | 12 nC | Directfet | ||||
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18,400
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 160 A | 2.4 mOhms | 1.8 V | 35 nC | Directfet | ||||
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430
In-stock
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Texas instruments | MOSFET 25V NCH NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 40 C | + 85 C | Reel | 1 Channel | Si | N-Channel | 25 V | 100 A | 590 uOhms | 1.5 V | 192 nC | NexFET | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 180 A | 600 uOhms | 1.2 V | 343 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 170 A | 1 MOhms | 1.2 V | 82 nC | Enhancement | ||||
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VIEW | Infineon Technologies | MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 170 A | 1 MOhms | 1 V to 2 V | 82 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 25V 75A CanPAK-2 SQ OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 75 A | 2.5 mOhms | 1.2 V | 23 nC | Enhancement | OptiMOS | |||
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VIEW | Infineon Technologies | MOSFET N-Ch 25V 180A CanPAK-2 MX OptiMOS | 20 V | SMD/SMT | WDSON-2-3 | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 180 A | 600 uOhms | 1.2 V | 343 nC | Enhancement | OptiMOS | |||
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346
In-stock
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IR / Infineon | MOSFET 25V 1 N-CH HEXFET 1.8mOhms 35nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 160 A | 3.2 mOhms | 1.35 V to 2.35 V | 35 nC | Enhancement |
