- Manufacture :
- Vgs - Gate-Source Voltage :
- Package / Case :
- Rds On - Drain-Source Resistance :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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6,000
In-stock
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Vishay Semiconductors | MOSFET 25V Vds 60A Id 17.2nC Qg Typ. | + 20 V, - 16 V | SMD/SMT | PowerPAK-SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 0.00115 Ohms | 1 V | 55 nC | Enhancement | ||||
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6,000
In-stock
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Vishay Semiconductors | MOSFET 25V Vds 60A Id 17.2nC Qg Typ. | + 20 V, - 16 V | SMD/SMT | PowerPAK-1212-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 60 A | 0.00115 Ohms | 1 V | 55 nC | Enhancement | ||||
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70
In-stock
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Infineon Technologies | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 40 A | 1.5 mOhms | 1.6 V | 55 nC | FastIRFet |
