- Manufacture :
- Mounting Style :
- Package / Case :
- Vgs th - Gate-Source Threshold Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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804
In-stock
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STMicroelectronics | MOSFET N-Ch 55 Volt 60 Amp | 15 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 60 A | 14 mOhms | Enhancement | |||||
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377
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 64A 14mOhm 54nC | 20 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 54 nC | |||||||
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797
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 64A 14mOhm 54nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 4 V | 81 nC | ||||
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74,200
In-stock
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Infineon Technologies | MOSFET MOSFT 55V 61A 14mOhm 61nC Log Lvl | SMD/SMT | TO-252-3 | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 61 A | 14 mOhms | 3 V | 92 nC | ||||||
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2
In-stock
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Infineon Technologies | MOSFET 55V 1 N-CH HEXFET 14mOhms 54nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 55 V | 64 A | 14 mOhms | 2 V to 4 V | 54 nC | Enhancement |
