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| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Mounting Style | Package / Case | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | |
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Toshiba | MOSFET N-Ch P-Ch Sg FET 0.4A -0.2A 30V -30V | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel, P-Channel | 30 V | 400 mA | 4 Ohms | 1.8 V, - 1.8 V |
