- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Tradename :
8 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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140
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Si | N-Channel | 1000 V | 14 A | 710 mOhms | 4 V | 120 nC | Enhancement | POWER MOS 8 | |||||
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25
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | SMD/SMT | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 14 A | 820 mOhms | 2.5 V | 120 nC | Enhancement | |||||
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2
In-stock
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Microsemi | MOSFET Power MOSFET - MOS8 | 30 V | Through Hole | D3PAK-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 14 A | 880 mOhms | 4 V | 120 nC | Enhancement | |||||
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70
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 1000 V | 14 A | 980 mOhms | 4 V | 120 nC | Enhancement | |||||
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VIEW | IXYS | MOSFET 14 Amps 1000V 0.90 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 14 A | 900 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 14 Amps 1000V 0.82 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 14 A | 820 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 14 Amps 1000V 0.75 Rds | 20 V | SMD/SMT | TO-268-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 14 A | 750 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 14 Amps 1000V 0.75 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 14 A | 750 mOhms | Enhancement | HyperFET |
