- Package / Case :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Applied Filters :
3 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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43,846
In-stock
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Texas instruments | MOSFET 12V N-CH Pwr MOSFET | 8 V | SMD/SMT | Picostar-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 22 A | 180 mOhms | 850 mV | 1.06 nC | NexFET | |||
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2,637
In-stock
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Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 1.45 mOhms | 1.1 V | 49 nC | Enhancement | NexFET | ||
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8,064
In-stock
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Texas instruments | MOSFET N-Channel NexFET Power MOSFET | 10 V | SMD/SMT | WSON-FET-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 22 A | 23 mOhms | 1.1 V | 2 nC | NexFET |
