- Package / Case :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,380
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 22A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 2.8 mOhms | 1 V | 60 nC | Enhancement | OptiMOS | |||
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908
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 22A D2PAK-2 OptiMOS-T2 | 16 V | SMD/SMT | TO-263-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 14.6 mOhms | Enhancement | OptiMOS | |||||
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1,212
In-stock
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Infineon Technologies | MOSFET 20V 1 N-CH HEXFET 11.7mOhms 14nC | 12 V | SMD/SMT | PQFN-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 22 A | 11.7 mOhms | 0.5 V to 1.1 V | 14 nC | Enhancement | ||||
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1,756
In-stock
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Infineon Technologies | MOSFET N-Ch 75V 22A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 22 A | 50 mOhms | Enhancement | OptiMOS | |||||
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4,999
In-stock
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Infineon Technologies | MOSFET N-Ch 30V 22A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 2.8 mOhms | 1 V | 60 nC | Enhancement | OptiMOS |
