- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | |
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1,000
In-stock
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STMicroelectronics | MOSFET POWER MOSFET N-CH 650V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 22 A | 125 mOhms | 4 V | 64 nC | |||
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1,961
In-stock
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STMicroelectronics | MOSFET N-Ch 500V 0.1 Ohm 22A MDmesh II | 25 V | SMD/SMT | TO-263-3 | Reel | 1 Channel | Si | N-Channel | 500 V | 22 A | 130 mOhms | 4 V | 62.5 nC |
