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Vgs - Gate-Source Voltage :
Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Channel Mode Tradename
IXFL44N100P
1+
$22.680
5+
$22.450
10+
$20.920
25+
$19.980
VIEW
RFQ
IXYS MOSFET 44 Amps 1000V 0.22 Rds 30 V SMD/SMT TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 22 A 240 mOhms Enhancement HyperFET
IXFR24N100
1+
$20.130
5+
$19.920
10+
$18.570
25+
$17.740
VIEW
RFQ
IXYS MOSFET 1KV 22A 20 V SMD/SMT TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 22 A 390 mOhms Enhancement HyperFET
IXFR24N50Q
30+
$8.760
120+
$7.610
270+
$7.260
510+
$6.620
VIEW
RFQ
IXYS MOSFET 22 Amps 500V 0.23 Rds 20 V SMD/SMT TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 500 V 22 A 230 mOhms Enhancement HyperFET
IXFL38N100Q2
25+
$37.920
100+
$34.370
250+
$33.180
VIEW
RFQ
IXYS MOSFET Q2-Class HiperFET 1000, 22A 30 V SMD/SMT TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 22 A 280 mOhms Enhancement HyperFET
IXFE24N100
10+
$25.730
30+
$24.570
100+
$21.970
250+
$20.960
VIEW
RFQ
IXYS MOSFET 22 Amps 1000V 0.39 Rds 20 V SMD/SMT ISOPLUS-227-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 1000 V 22 A 390 mOhms Enhancement HyperFET
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