- Maximum Operating Temperature :
- Number of Channels :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
17 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
3,403
In-stock
|
Fairchild Semiconductor | MOSFET 30V/20V N-Channel PowerTrench MOSFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 6.3 mOhms | 1.9 V | 9.9 nC | Enhancement | PowerTrench | ||||
|
2,385
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 5 mOhms | 1.5 V | 11 nC | PowerTrench SyncFET | |||||
|
4,453
In-stock
|
Fairchild Semiconductor | MOSFET N-Chan PowerTrench MOSFET 80V, 22A | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 80 V | 22 A | 11.7 mOhms | PowerTrench | |||||||
|
2,337
In-stock
|
Fairchild Semiconductor | MOSFET 30V N-Channel PowerTrench SyncFET | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 4.3 mOhms | 1.5 V | 13 nC | PowerTrench SyncFET | |||||
|
2,085
In-stock
|
Diodes Incorporated | MOSFET 60V N-Ch Enh FET 60Vdss 20Vgss 100A | 20 V | SMD/SMT | POWERDI5060-8 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 22 A | 3.1 mOhms | 96.3 nC | Enhancement | ||||||
|
5,820
In-stock
|
onsemi | MOSFET NFET 60V 18A 43MOHM | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 22 A | 39 mOhms | 15 nC | |||||||
|
2,380
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 22A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 2.8 mOhms | 1 V | 60 nC | Enhancement | OptiMOS | ||||
|
5,460
In-stock
|
Fairchild Semiconductor | MOSFET 30V 22A 10mOhms N-Ch PowerTrench | 20 V | SMD/SMT | Power-56-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 22 A | 10 mOhms | 2 V | 17 nC | ||||||
|
447
In-stock
|
Fairchild Semiconductor | MOSFET 100V NCh PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 22 A | 64 mOhms | Enhancement | PowerTrench | ||||||
|
1,756
In-stock
|
Infineon Technologies | MOSFET N-Ch 75V 22A DPAK-2 OptiMOS | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 75 V | 22 A | 50 mOhms | Enhancement | OptiMOS | ||||||
|
2,637
In-stock
|
Texas instruments | MOSFET 30V, N-channel NexFET Pwr MOSFET | 20 V | SMD/SMT | VSON-Clip-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 1.45 mOhms | 1.1 V | 49 nC | Enhancement | NexFET | ||||
|
4,999
In-stock
|
Infineon Technologies | MOSFET N-Ch 30V 22A DSO-8 OptiMOS 3M | 20 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 22 A | 2.8 mOhms | 1 V | 60 nC | Enhancement | OptiMOS | ||||
|
VIEW | IXYS | MOSFET 1KV 22A | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 390 mOhms | Enhancement | HyperFET | ||||||
|
4,576
In-stock
|
Toshiba | MOSFET N-Ch 80V 22A 27W UMOSVIII 710pF 11nC | 20 V | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 80 V | 22 A | 25 mOhms | 2 V to 4 V | 11 nC | Enhancement | |||||||
|
VIEW | IXYS | MOSFET 22 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 22 A | 230 mOhms | Enhancement | HyperFET | ||||||
|
VIEW | IXYS | MOSFET 22 Amps 1000V 0.39 Rds | 20 V | SMD/SMT | ISOPLUS-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 22 A | 390 mOhms | Enhancement | HyperFET | ||||||
|
551
In-stock
|
IR / Infineon | MOSFET 25V Single N-Ch HEXFET PWR 50A | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 25 V | 22 A | 5.6 mOhms | 1.6 V | 17 nC | FastIRFet |