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Package / Case :
Minimum Operating Temperature :
Packaging :
Rds On - Drain-Source Resistance :
Vgs th - Gate-Source Threshold Voltage :
Qg - Gate Charge :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IPA60R650CEXKSA1
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RFQ
8,750
In-stock
Infineon Technologies MOSFET N-Ch 600V 7A TO220FP-3 20 V Through Hole TO-220FP-3 - 40 C + 150 C Tube 1 Channel Si N-Channel 650 V 7 A 650 mOhms 2.5 V 20.5 nC Enhancement CoolMOS
IPA65R225C7
1+
$2.620
10+
$2.230
100+
$1.780
500+
$1.560
RFQ
272
In-stock
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 20 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 7 A 199 mOhms 3 V 20 nC Enhancement CoolMOS
IPA65R225C7XKSA1
1+
$2.620
10+
$2.230
100+
$1.780
500+
$1.560
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RFQ
Infineon Technologies MOSFET HIGH POWER BEST IN CLASS 20 V Through Hole TO-220FP-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 650 V 7 A 199 mOhms 3 V 20 nC Enhancement CoolMOS
IPL65R660E6
1+
$1.490
10+
$1.260
100+
$1.010
500+
$0.882
3000+
$0.681
RFQ
2,805
In-stock
Infineon Technologies MOSFET LOW POWER PRICE/PERFORM 20 V SMD/SMT VSON-4 - 40 C + 150 C Reel 1 Channel Si N-Channel 650 V 7 A 594 mOhms 2.5 V 23 nC Enhancement CoolMOS
IPL65R660E6AUMA1
3000+
$0.681
6000+
$0.655
9000+
$0.630
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RFQ
Infineon Technologies MOSFET LOW POWER PRICE/PERFORM 20 V SMD/SMT VSON-4 - 40 C + 150 C Reel 1 Channel Si N-Channel 650 V 7 A 594 mOhms 2.5 V 23 nC Enhancement CoolMOS
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