- Manufacture :
- Vgs - Gate-Source Voltage :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Applied Filters :
16 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
988
In-stock
|
Fairchild Semiconductor | MOSFET 500V N-CHANNEL | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 7 A | 760 mOhms | Enhancement | UniFET | ||||||
|
1,258
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 530 mOhms | Enhancement | SuperFET | ||||||
|
696
In-stock
|
STMicroelectronics | MOSFET N-Ch 650 Volt 6.4Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.2 Ohms | 41 nC | Enhancement | ||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET NCH 6V 7A FDMESH FDMesh | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 700 mOhms | Enhancement | |||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | |||||
|
476
In-stock
|
IXYS | MOSFET 7 Amps 1000V | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 7 A | 1.9 Ohms | HyperFET | |||||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 670 mOhms | 3 V | 12.5 nC | MDmesh II Plus | |||||
|
778
In-stock
|
Fairchild Semiconductor | MOSFET 650V N-Ch Advance Q-FET C-Series | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 1.4 Ohms | Enhancement | |||||||
|
439
In-stock
|
STMicroelectronics | MOSFET N-Ch 600 Volt 7 Amp Zener SuperMESH | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 950 mOhms | 38 nC | Enhancement | ||||||
|
118
In-stock
|
IXYS | MOSFET 7 Amps 800V 1.44 Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 7 A | 1.44 Ohms | 5 V | 32 nC | Enhancement | Polar, HiPerFET | ||||
|
169
In-stock
|
Fairchild Semiconductor | MOSFET 600V N-Channel SuperFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 600 mOhms | 5 V | 30 nC | Enhancement | |||||
|
1,000
In-stock
|
STMicroelectronics | MOSFET N-channel 800 V, 0.75 Ohm typ., 7 A MDmesh K5 Power MOSF... | +/- 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 7 A | 720 mOhms | 3 V | 17.7 nC | Enhancement | ||||||
|
900
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 80 V | 7 A | 730 mOhms | 3 V | 12 nC | Enhancement | |||||
|
46
In-stock
|
IXYS | MOSFET 1.1 Ohms Rds | 30 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 7 A | 1.1 Ohms | 5.5 V | 20 nC | Enhancement | PolarHV | ||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 620V 0.95 Ohm 7.0A TO-220 | Through Hole | TO-220-3 | Tube | Si | N-Channel | 620 V | 7 A | 950 mOhms | ||||||||||||
|
VIEW | STMicroelectronics | MOSFET N-Ch 650V 0.56 Ohm 7A MDmesh M5 PWR MO | 25 V | Through Hole | TO-220-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 7 A | 600 mOhms | 15 nC | Enhancement |