- Manufacture :
- Vgs - Gate-Source Voltage :
- Mounting Style :
- Package / Case :
- Number of Channels :
- Transistor Polarity :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
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5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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GET PRICE |
4,971
In-stock
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Diodes Incorporated | MOSFET N-Chnl 200V | 20 V | Through Hole | TO-92-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 200 V | 180 mA | 10 Ohms | Enhancement | ||||
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GET PRICE |
13,120
In-stock
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Nexperia | MOSFET NX3020NAKW/SC-70/REEL 7" Q1/T1 | - 20 V | SMD/SMT | SOT-323-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 180 mA | 2.7 Ohms | 1.2 V | 0.34 nC | |||
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GET PRICE |
4,612
In-stock
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Nexperia | MOSFET NX3020NAKS/SC-88/REEL 7" Q1/T1 | SMD/SMT | SOT-363-6 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 180 mA | 2.7 Ohms | 1.2 V | 0.34 nC | Enhancement | |||
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GET PRICE |
3,000
In-stock
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Toshiba | MOSFET N-Ch Sm Sig FET 0.1A -0.1A 20V 2-in1 | SMD/SMT | SOT-363-6 | Reel | 2 Channel | Si | N-Channel, P-Channel | 20 V | 180 mA | 11 Ohms | 1 V, - 1 V | |||||||
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GET PRICE |
4,022
In-stock
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Toshiba | MOSFET Singel N-ch 20V 0.18A | 10 V | SMD/SMT | SOT-723-3 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 180 mA | 3 Ohms | Enhancement |
