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Vds - Drain-Source Breakdown Voltage :
Rds On - Drain-Source Resistance :
4 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFX360N10T
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30
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IXYS MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A   Through Hole TO-247-3     Tube   Si N-Channel 100 V 360 A 2.9 mOhms       HiPerFET
IXTT360N055T2
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45
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IXYS MOSFET 360Amps 55V   Through Hole TO-268-3     Tube   Si N-Channel 55 V 360 A 2.4 mOhms        
IXFK360N10T
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18
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IXYS MOSFET TRENCH HIPERFET PWR MOSFET 100V 360A 20 V Through Hole TO-264-3 - 55 C + 175 C Tube 1 Channel Si N-Channel 100 V 360 A 2.9 mOhms 2.5 V to 4.5 V 525 nC Enhancement HiPerFET
IXTH360N055T2
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RFQ
30
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IXYS MOSFET 360Amps 55V   Through Hole TO-247-3     Tube   Si N-Channel 55 V 360 A 2.4 mOhms        
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