- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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66
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 800 V | 34 A | 125 mOhms | 3 V | 180 nC | Enhancement | |||||
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34
In-stock
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Microsemi | MOSFET Power MOSFET - CoolMOS | 20 V | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 34 A | 145 mOhms | 2.1 V | 180 nC | Enhancement | |||||||
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20
In-stock
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IXYS | MOSFET 800V 34A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 34 A | 240 mOhms | Enhancement | HyperFET | |||||
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9
In-stock
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IXYS | MOSFET 800V 34A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 34 A | 240 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 34 Amps 800V 0.24 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 34 A | 240 mOhms | Enhancement | HyperFET |
