- Vgs - Gate-Source Voltage :
- Minimum Operating Temperature :
- Maximum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
- Tradename :
15 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
2,163
In-stock
|
Infineon Technologies | MOSFET N-Ch 650V 9A ThinPAK-4 CoolMOS CP | VSON-4 | Reel | 1 Channel | Si | N-Channel | 600 V | 27 A | 385 mOhms | CoolMOS | |||||||||||
|
4,700
In-stock
|
IR / Infineon | MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 27 A | 45 mOhms | 4 V | 34 nC | Enhancement | |||||
|
5,455
In-stock
|
onsemi | MOSFET NCH+NCH 2.5V DRIVE SERIES | 8 V | SMD/SMT | CSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 27 A | 3.2 mOhms | 4 V | 120 nC | Enhancement | |||||
|
1,892
In-stock
|
Fairchild Semiconductor | MOSFET 25V 50A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 27 A | 3.2 mOhms | Enhancement | PowerTrench | ||||||
|
2,525
In-stock
|
Infineon Technologies | MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 2.45 mOhms | 130 nC | |||||||||
|
556
In-stock
|
IR / Infineon | MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 3.6 mOhms | 2.45 V | 28 nC | ||||||
|
840
In-stock
|
IR / Infineon | MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 27 A | 58 mOhms | 5 V | 21 nC | ||||||
|
2,408
In-stock
|
IR / Infineon | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 27 A | 2.95 mOhms | 1.7 V | 59 nC | ||||||
|
30,000
In-stock
|
Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 27 A | 22 mOhms | 2.5 V | 20 nC | Enhancement | |||||
|
1,878
In-stock
|
Infineon Technologies | MOSFET N-Ch 60V 27A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 27 A | 40 mOhms | Enhancement | OptiMOS | ||||||
|
238
In-stock
|
STMicroelectronics | MOSFET POWER MOSFET N-CH 650V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 27 A | 85 mOhms | 4 V | 83 nC | |||||||
|
485
In-stock
|
Fairchild Semiconductor | MOSFET 25V 50A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 27 A | 4 mOhms | Enhancement | PowerTrench | ||||||
|
GET PRICE |
46,200
In-stock
|
Toshiba | MOSFET N-Ch 33V FET 27A 39W 2900pF 34nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 33 V | 27 A | 6.2 mOhms | 34 nC | |||||||||
|
VIEW | Toshiba | MOSFET N-Ch 30V FET 27A 39W 2600pF 37nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 27 A | 5.9 mOhms | 37 nC | ||||||||||
|
VIEW | Toshiba | MOSFET N-Ch 20V FET 27A 30W 1879pF 26nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 8.7 mOhms | 26 nC |