- Manufacture :
- Mounting Style :
- Package / Case :
- Rds On - Drain-Source Resistance :
- Qg - Gate Charge :
7 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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26
In-stock
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Microsemi | MOSFET POWER MOS V 800V 27A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | 4 V | 340 nC | Enhancement | |||||
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5
In-stock
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IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.35W Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 800V 27A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | Enhancement | HyperFET | |||||
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8,600
In-stock
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IXYS | MOSFET 800V 27A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | Enhancement | HyperFET |
