- Manufacture :
- Package / Case :
- Minimum Operating Temperature :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
5 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | |
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2,525
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 2.45 mOhms | 130 nC | |||||||
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556
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 3.6 mOhms | 2.45 V | 28 nC | ||||
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VIEW | IXYS | MOSFET 27 Amps 200V 100 Rds | SMD/SMT | TO-263-3 | Tube | Si | N-Channel | 20 V | 27 A | 100 Ohms | ||||||||||
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3,479
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 27 A | 2.45 mOhms | 0.5 V to 1.1 V | 130 nC | Enhancement | |||
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VIEW | Toshiba | MOSFET N-Ch 20V FET 27A 30W 1879pF 26nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 8.7 mOhms | 26 nC |
