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Rds On - Drain-Source Resistance :
5 products
IMAGE PART NO. PRICE QUANTITY STOCK MANUFACTURE DESCRIPTION Vgs - Gate-Source Voltage Mounting Style Package / Case Minimum Operating Temperature Maximum Operating Temperature Packaging Number of Channels Technology Transistor Polarity Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Channel Mode Tradename
IXFX27N80Q
1+
$19.060
10+
$17.530
25+
$16.800
100+
$14.810
RFQ
5
In-stock
IXYS MOSFET 27 Amps 800V 0.32 Rds 20 V Through Hole TO-247-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 27 A 320 mOhms 4.5 V 170 nC Enhancement HyperFET
IXFK27N80Q
1+
$19.360
5+
$19.160
10+
$17.860
25+
$17.060
VIEW
RFQ
IXYS MOSFET 27 Amps 800V 0.32 Rds 20 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 27 A 320 mOhms 4.5 V 170 nC Enhancement HyperFET
IXFN27N80
20+
$28.660
30+
$27.380
100+
$24.480
250+
$23.350
VIEW
RFQ
IXYS MOSFET 800V 27A 20 V Chassis Mount SOT-227-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 27 A 300 mOhms     Enhancement HyperFET
IXFK27N80
25+
$17.000
100+
$15.000
250+
$14.000
500+
$13.000
RFQ
8,600
In-stock
IXYS MOSFET 800V 27A 20 V Through Hole TO-264-3 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 27 A 300 mOhms     Enhancement HyperFET
IXFN27N80Q
10+
$28.660
30+
$27.380
100+
$24.480
250+
$23.350
VIEW
RFQ
IXYS MOSFET 27 Amps 800V 0.32 Rds 20 V Chassis Mount SOT-227-4 - 55 C + 150 C Tube 1 Channel Si N-Channel 800 V 27 A 320 mOhms     Enhancement HyperFET
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