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- Minimum Operating Temperature :
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- Vgs th - Gate-Source Threshold Voltage :
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29 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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2,163
In-stock
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Infineon Technologies | MOSFET N-Ch 650V 9A ThinPAK-4 CoolMOS CP | VSON-4 | Reel | 1 Channel | Si | N-Channel | 600 V | 27 A | 385 mOhms | CoolMOS | ||||||||||
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4,700
In-stock
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IR / Infineon | MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 55 V | 27 A | 45 mOhms | 4 V | 34 nC | Enhancement | ||||
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5,455
In-stock
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onsemi | MOSFET NCH+NCH 2.5V DRIVE SERIES | 8 V | SMD/SMT | CSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 27 A | 3.2 mOhms | 4 V | 120 nC | Enhancement | ||||
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1,892
In-stock
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Fairchild Semiconductor | MOSFET 25V 50A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 27 A | 3.2 mOhms | Enhancement | PowerTrench | |||||
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2,525
In-stock
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Infineon Technologies | MOSFET MOSFT 20V 27A 2.5mOhm 2.5V cpbl | 12 V | SMD/SMT | SO-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 2.45 mOhms | 130 nC | ||||||||
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556
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 3.6 mOhms | 2.45 V | 28 nC | |||||
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840
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 27 A | 58 mOhms | 5 V | 21 nC | |||||
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2,408
In-stock
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IR / Infineon | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 27 A | 2.95 mOhms | 1.7 V | 59 nC | |||||
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30,000
In-stock
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Siliconix / Vishay | MOSFET N Ch 100Vds 20Vgs AEC-Q101 Qualified | +/- 20 V | SMD/SMT | PowerPAK-SO-8L-4 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 100 V | 27 A | 22 mOhms | 2.5 V | 20 nC | Enhancement | ||||
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519
In-stock
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IR / Infineon | MOSFET MOSFT 55V 27A 16.7nC 35mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 27 A | 60 mOhms | 16.7 nC | ||||||||
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511
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 27 A | 110 mOhms | Enhancement | QFET | |||||
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1,878
In-stock
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Infineon Technologies | MOSFET N-Ch 60V 27A DPAK-2 | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 27 A | 40 mOhms | Enhancement | OptiMOS | |||||
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1,513
In-stock
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STMicroelectronics | MOSFET N-channel 30 V 27 A TO 220 | 22 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 27 A | 20 mOhms | |||||||
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26
In-stock
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Microsemi | MOSFET POWER MOS V 800V 27A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | 4 V | 340 nC | Enhancement | |||||
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5
In-stock
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IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | |||
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1,799
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 27A 26mOhm 93.3nC LogLvl | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 27 A | 40 mOhms | 93.3 nC | ||||||||
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30
In-stock
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IXYS | MOSFET 32 Amps 1000V 0.32 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 27 A | 320 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | |||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.35W Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 800V 27A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | Enhancement | HyperFET | |||||
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8,600
In-stock
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IXYS | MOSFET 800V 27A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | Enhancement | HyperFET | |||||
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VIEW | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 45mOhms | 20 V | SMD/SMT | TO-252-3 | - 55 C | Tube | 1 Channel | Si | N-Channel | 55 V | 27 A | 45 mOhms | 22.7 nC | Enhancement | ||||||
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3,479
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 27 A | 2.45 mOhms | 0.5 V to 1.1 V | 130 nC | Enhancement | ||||
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238
In-stock
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STMicroelectronics | MOSFET POWER MOSFET N-CH 650V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 27 A | 85 mOhms | 4 V | 83 nC | ||||||
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485
In-stock
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Fairchild Semiconductor | MOSFET 25V 50A N-Channel PowerTrench | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 25 V | 27 A | 4 mOhms | Enhancement | PowerTrench | |||||
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GET PRICE |
46,200
In-stock
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Toshiba | MOSFET N-Ch 33V FET 27A 39W 2900pF 34nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 33 V | 27 A | 6.2 mOhms | 34 nC | ||||||||
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VIEW | Toshiba | MOSFET N-Ch 30V FET 27A 39W 2600pF 37nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 30 V | 27 A | 5.9 mOhms | 37 nC | |||||||||
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VIEW | Toshiba | MOSFET N-Ch 20V FET 27A 30W 1879pF 26nC | SMD/SMT | TSON-Advance-8 | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 8.7 mOhms | 26 nC |
