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11 products
IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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519
In-stock
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IR / Infineon | MOSFET MOSFT 55V 27A 16.7nC 35mOhm LogLvAB | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 55 V | 27 A | 60 mOhms | 16.7 nC | |||||||||
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511
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 27 A | 110 mOhms | Enhancement | QFET | ||||||
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1,513
In-stock
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STMicroelectronics | MOSFET N-channel 30 V 27 A TO 220 | 22 V | Through Hole | TO-220-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 27 A | 20 mOhms | ||||||||
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26
In-stock
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Microsemi | MOSFET POWER MOS V 800V 27A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | 4 V | 340 nC | Enhancement | ||||||
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20
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 1200 V | 27 A | 480 mOhms | 4 V | 300 nC | Enhancement | POWER MOS 8 | ||||||
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5
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 27 A | 480 mOhms | 4 V | 300 nC | Enhancement | POWER MOS 8 | |||||
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5
In-stock
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IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | ||||
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1,799
In-stock
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Infineon Technologies | MOSFET MOSFT 100V 27A 26mOhm 93.3nC LogLvl | 16 V | Through Hole | TO-220-3 | Tube | 1 Channel | Si | N-Channel | 100 V | 27 A | 40 mOhms | 93.3 nC | |||||||||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | ||||
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VIEW | IXYS | MOSFET 27 Amps 200V 100 Rds | Through Hole | TO-220-3 | Tube | Si | N-Channel | 200 V | 27 A | 100 Ohms | ||||||||||||
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8,600
In-stock
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IXYS | MOSFET 800V 27A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | Enhancement | HyperFET |