- Mounting Style :
- Minimum Operating Temperature :
- Number of Channels :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
19 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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5,455
In-stock
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onsemi | MOSFET NCH+NCH 2.5V DRIVE SERIES | 8 V | SMD/SMT | CSP-6 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 12 V | 27 A | 3.2 mOhms | 4 V | 120 nC | Enhancement | ||||
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556
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH 2.7mOhm DirectFET 28nC | 20 V | SMD/SMT | DirectFET-MX | - 40 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 20 V | 27 A | 3.6 mOhms | 2.45 V | 28 nC | |||||
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840
In-stock
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IR / Infineon | MOSFET 150V 1 N-CH HEXFET 58mOhms 20nC | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 150 V | 27 A | 58 mOhms | 5 V | 21 nC | |||||
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4,399
In-stock
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onsemi | MOSFET NCH+NCH 2.5V DRIVE S | 8 V | SMD/SMT | CSP-6 | + 150 C | Reel | 2 Channel | Si | N-Channel | 12 V | 27 A | 6.3 mOhms | 500 mV | 100 nC | Enhancement | |||||
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2,408
In-stock
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IR / Infineon | MOSFET MOSFET, 30V, 25A, 4 4.7nC Qg, PQFN5x6 | 20 V | SMD/SMT | PQFN-8 | - 55 C | + 150 C | Reel | 1 Channel | Si | N-Channel | 30 V | 27 A | 2.95 mOhms | 1.7 V | 59 nC | |||||
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511
In-stock
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Fairchild Semiconductor | MOSFET 250V N-Channel QFET | 30 V | Through Hole | TO-3PN-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 250 V | 27 A | 110 mOhms | Enhancement | QFET | |||||
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2,324
In-stock
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Texas instruments | MOSFET Dual 30V N-CH NexFET Pwr MOSFETs | 10 V | SMD/SMT | VSON-8 | - 55 C | + 150 C | Reel | 2 Channel | Si | N-Channel | 30 V | 27 A | 38 mOhms | 1 V | 6.3 nC | NexFET | ||||
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26
In-stock
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Microsemi | MOSFET POWER MOS V 800V 27A | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | 4 V | 340 nC | Enhancement | |||||
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20
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | T-MAX-3 | - 55 C | + 150 C | Si | N-Channel | 1200 V | 27 A | 480 mOhms | 4 V | 300 nC | Enhancement | POWER MOS 8 | |||||
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5
In-stock
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Microsemi | MOSFET Power FREDFET - MOS8 | 30 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Reel | Si | N-Channel | 1200 V | 27 A | 480 mOhms | 4 V | 300 nC | Enhancement | POWER MOS 8 | ||||
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5
In-stock
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IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | |||
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30
In-stock
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IXYS | MOSFET 32 Amps 1000V 0.32 Rds | 30 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 27 A | 320 mOhms | 6.5 V | 225 nC | Enhancement | Polar, HiPerFET | |||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | 4.5 V | 170 nC | Enhancement | HyperFET | |||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.35W Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 800V 27A | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | Enhancement | HyperFET | |||||
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8,600
In-stock
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IXYS | MOSFET 800V 27A | 20 V | Through Hole | TO-264-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 300 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 27 Amps 800V 0.32 Rds | 20 V | Chassis Mount | SOT-227-4 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 27 A | 320 mOhms | Enhancement | HyperFET | |||||
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3,479
In-stock
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IR / Infineon | MOSFET 20V 1 N-CH HEXFET 2.45mOhms 130nC | 12 V | SMD/SMT | SO-8 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 20 V | 27 A | 2.45 mOhms | 0.5 V to 1.1 V | 130 nC | Enhancement | ||||
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238
In-stock
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STMicroelectronics | MOSFET POWER MOSFET N-CH 650V | 25 V | SMD/SMT | TO-263-3 | + 150 C | Reel | 1 Channel | Si | N-Channel | 650 V | 27 A | 85 mOhms | 4 V | 83 nC |
