- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
2 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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1,771
In-stock
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IR / Infineon | MOSFET 60V, 58A, 9.9 mOhm 40 nC Qg | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Reel | 1 Channel | Si | N-Channel | 60 V | 58 A | 8 mOhms | 2.1 V | 40 nC | Enhancement | StrongIRFET | |||
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173
In-stock
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IR / Infineon | MOSFET 30V 1 N-CH HEXFET 8.9mOhms 10nC | 20 V | SMD/SMT | TO-252-3 | - 55 C | + 175 C | Tube | 1 Channel | Si | N-Channel | 30 V | 58 A | 11.9 mOhms | 1.35 V to 2.35 V | 10 nC | Enhancement |
