- Vgs - Gate-Source Voltage :
- Mounting Style :
- Vds - Drain-Source Breakdown Voltage :
- Rds On - Drain-Source Resistance :
- Vgs th - Gate-Source Threshold Voltage :
- Qg - Gate Charge :
- Tradename :
- Applied Filters :
22 products
| IMAGE | PART NO. | PRICE | QUANTITY | STOCK | MANUFACTURE | DESCRIPTION | Vgs - Gate-Source Voltage | Mounting Style | Package / Case | Minimum Operating Temperature | Maximum Operating Temperature | Packaging | Number of Channels | Technology | Transistor Polarity | Vds - Drain-Source Breakdown Voltage | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Vgs th - Gate-Source Threshold Voltage | Qg - Gate Charge | Channel Mode | Tradename | |
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512
In-stock
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STMicroelectronics | MOSFET POWER MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 150 mOhms | 3 V | 43 nC | Enhancement | ||||
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298
In-stock
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IXYS | MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 420 mOhms | 3.5 V to 6.5 V | 130 nC | Enhancement | HyperFET | |||
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413
In-stock
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STMicroelectronics | MOSFET N-CH 600V 0.135Ohm typ. 22A MDmesh M2 | 25 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 120 mOhms | 3 V | 37 nC | |||||
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67
In-stock
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IXYS | MOSFET 24 Amps 500V 0.30 Ohms Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 300 mOhms | 5 V | 160 nC | Enhancement | ||||
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101
In-stock
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Fairchild Semiconductor | MOSFET SuperFET2 650V, 150 mOhm, FRFET | 20 V, 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 150 mOhms | 5 V | 72 nC | SuperFET II FRFET | ||||
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127
In-stock
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IXYS | MOSFET DIODE Id24 BVdass800 | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 400 mOhms | Enhancement | HyperFET | |||||
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60
In-stock
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IXYS | MOSFET 500V 44A | 30 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 150 mOhms | Enhancement | HyperFET | |||||
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59
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
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37
In-stock
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IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/24A | 30 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 440 mOhms | 140 nC | HyperFET | |||||||
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28
In-stock
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Infineon Technologies | MOSFET HIGH POWER_NEW | +/- 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 650 V | 24 A | 84 mOhms | 3 V | 45 nC | Enhancement | CoolMOS | |||
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34
In-stock
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IXYS | MOSFET 24 Amps 600V | 20 V | Through Hole | TO-247-3 | Tube | 1 Channel | Si | N-Channel | 600 V | 24 A | 165 mOhms | Enhancement | CoolMOS | |||||||
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30
In-stock
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IXYS | MOSFET PolarP2 Power MOSFET | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | Si | N-Channel | 500 V | 24 A | 270 mOhms | 4.5 V | 48 nC | Enhancement | PolarP2 | ||||
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VIEW | IXYS | MOSFET Q3Class HiPerFET Pwr MOSFET 800V/24A | 30 V | Through Hole | TO-247-3 | + 150 C | Tube | 1 Channel | Si | N-Channel | 800 V | 24 A | 300 mOhms | 140 nC | HyperFET | ||||||
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VIEW | IXYS | MOSFET 24 Amps 900V 0.45 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 900 V | 24 A | 450 mOhms | Enhancement | HyperFET | |||||
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10
In-stock
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IXYS | MOSFET 24 Amps 1000V 0.39 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 1000 V | 24 A | 390 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 500V 24A | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.23 Rds | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 500V 24A Q-Class | 20 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 22 Amps 500V 0.23 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 230 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.2 Rds | 20 V | SMD/SMT | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 200 mOhms | Enhancement | HyperFET | |||||
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VIEW | IXYS | MOSFET 24 Amps 500V 0.23 Rds | 30 V | Through Hole | TO-247-3 | - 55 C | + 150 C | Tube | 1 Channel | Si | N-Channel | 500 V | 24 A | 240 mOhms | Enhancement | ||||||
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VIEW | IXYS | MOSFET 24 Amps 1200V 2.7 Rds | Through Hole | TO-247-3 | Tube | Si | 1200 V | 24 A | 2.7 Ohms |
